SAMSUNG INTERNAL 2.5-INCH SATA 3.0 SSD 850 EVO 2TB (MZ-75E2T0BW)

Out Of Stock SAMSUNG INTERNAL 2.5-INCH SATA 3.0 SSD 850 EVO 2TB (MZ-75E2T0BW)
Samsung 850 EVO Solid State Drive
What is 3D V-NAND and how does it differ from existing technology?
Samsung’s unique and innovative 3D V-NAND flash memory architecture is a breakthrough in overcoming the density limitations, performance and endurance of today’s conventional planar NAND architecture. 3D V-NAND is fabricated by stacking 32 cell layers vertically over one another rather than decreasing the cells dimensions and trying to fit itself onto a fixed horizontal space resulting in higher density and better performance utiliSing a smaller footprint.
Samsung SSD 850 EVO Notebook Drive
OptimiSe daily computing with TurboWrite technology for unrivalled read/write speeds
Achieve the ultimate read/write performance to maximise your everyday computing experience with Samsung’s TurboWrite technology. You not only obtain more than a 10% better user experience than 840 EVO* but up to 1.9x faster random write speeds for 120/250 GB models** as well. The 850EVO delivers the top of its class performance in sequential read (540 MB/s) and write (520 MB/s) speeds. Plus, you also gain optimised random performance in all QD for client PC usage scenario. 
* PCmark7 (250 GB ): 6,700 (840 EVO) > 7,600 (850 EVO)
** Random Write (QD32, 120 GB): 36,000 IOPS (840 EVO) > 88,000 IOPS (850 EVO)
Samsung 850 Best SSD
Get into the fast lane with the improved RAPID mode
Samsung’s Magician software which provides Rapid Mode for 2x faster processing data speeds* on a system level by utilising unused PC memory (DRAM) as cache storage. The newest Magician increased the maximum memory usage in Rapid mode from 1 GB, in the previous 840 EVO version, to up to 4 GB with the 850 EVO when implementing 16 GB of DRAM. You also get a 2x performance* boost in all random Queue depth.
* PCMARK7 RAW (250 GB): 7,500 > 15,000 (Rapid mode)
Guaranteed endurance and reliability bolstered by 3D V-NAND technology
Guaranteed endurance and reliability bolstered by 3D V-NAND technology
The 850 EVO delivers guaranteed endurance and reliability by doubling the T BW* compared to the previous generation 840 EVO** backed by an industry leading 5 year warranty. The 850 EVO through minimised performance degradation allows sustained performance improvements of up to 30% over the 840 EVO proving to be one of the most dependable storage devices***.
* TBW: Total Bytes Written
** TBW: 43 (840 EVO) > 75 (850 EVO 120/250 GB),150 (850 EVO 500/1 TB)
*** Sustained Performance (250 GB): 3300 IOPS (840 EVO) > 6500 IOPS (850 EVO), Performance measured after 12 hours “Random Write” test
Compute longer with improved energy efficiency backed by 3D V-NAND
Compute longer with improved energy efficiency backed by 3D V-NAND
 
The 850 EVO delivers significantly longer battery life on your notebook with a controller optimised for 3D V-NAND now enabling Device Sleep at a highly efficient 2mW. The 850 EVO is now 25% more power efficient to the 840 EVO during write operations* thanks to 3D V-NAND only consuming half the energy than that of Planar 2D NAND.
* Power (250 GB): 3.2 Watt (840 EVO) > 2.4 Watt (850 EVO)

 


General Feature

  • Application

    Client PCs
  • Capacity

    2,000 GB (1 GB = 1 Billionbyte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
  • Form Factor

    2.5 inch
  • Interface

    SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s & SATA 1.5 Gb/s interface
  • Dimension (WxHxD)

    100.00 x 69.85 x 6.80 (mm)
  • Weight

    Max 66 g
  • Storage Memory

    Samsung 32 layer 3D V-NAND
  • Controller

    Samsung MHX Controller
  • Cache Memory

    Samsung 2 GB Low Power DDR3 SDRAM

Special Feature

  • TRIM Support

    TRIM Supported
  • S.M.A.R.T Support

    S.M.A.R.T Supported
  • GC (Garbage Collection)

    Auto Garbage Collection Algorithm
  • Encryption Support

    AES 256 bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive)
  • WWN Support

    World Wide Name supported
  • Device Sleep Mode Support

    Yes

Performance

  • Sequential Read

    Up to 540 MB/sec Sequential Read * Performance may vary based on system hardware & configuration
  • Sequential Write

    Up to 520 MB/sec Sequential Write * Performance may vary based on system hardware & configuration
  • Random Read (4KB, QD32)

    Up to 98,000 IOPS Random Read * Performance may vary based on system hardware & configuration
  • Random Write (4KB, QD32)

    Up to 90,000 IOPS Random Write * Performance may vary based on system hardware & configuration
  • Random Read (4KB, QD1)

    Up to 10,000 IOPS Random Read * Performance may vary based on system hardware & configuration
  • Random Write (4KB, QD1)

    Up to 40,000 IOPS Random Write * Performance may vary based on system hardware & configuration

Environment

  • Average Power Consumption (system level)

    *Average: 4.7 Watts *Maximum: 7.2 Watts (Burst mode)* Actual power consumption may vary depending on system hardware & configuration
  • Power consumption (Idle)

    Max. 60 mWatts *Actual power consumption may vary depending on system hardware & configuration
  • Allowable Voltage

    5 V ± 5% Allowable voltage
  • Reliability (MTBF)

    1.5 Million Hours Reliability (MTBF)
  • Operating Temperature

    0 - 70 °C
  • Shock

    1,500 G & 0.5 ms (Half sine)

Software

  • Management SW

    Magician Software for SSD management

Warranty

  • Warranty

    5 Years Limited Warranty or 150 TBW Limited Warranty

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  • Brand: SAMSUNG
  • Product Code: MZ-75E2T0BW
  • Availability: Out Of Stock
  • Rs.58,400
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